pressure transducer price
There are five common types of pressure sensors. The following is a description of the working principle of the five common pressure sensors:
1. Piezoelectric pressure sensor: Piezoelectric effect is the main working principle of piezoelectric sensor. Piezoelectric sensor cannot be used for static measurement, because the charge after external force is only saved when the loop has infinite input impedance. . The actual situation is not like this, so this determines that the piezoelectric sensor can only measure the dynamic stress.
2, ceramic pressure sensor: ceramic pressure sensor based on the piezoresistive effect, the pressure directly on the front surface of the ceramic diaphragm, so that the diaphragm produces a slight deformation, thick film resistors printed on the back of the ceramic diaphragm, connected into a Wheatstone The bridge, due to the piezoresistive effect of the varistor, causes the bridge to produce a highly linear voltage proportional to the pressure and a voltage signal proportional to the excitation voltage. The standard signal is calibrated to 2.0/3.0/3.3mv depending on the pressure range. /v, etc., can be compatible with strain gauge sensors.
3, diffusion silicon pressure sensor: diffusion silicon pressure sensor working principle is based on the piezoresistive effect, the use of piezoresistive effect principle, the pressure of the measured medium directly on the sensor diaphragm (stainless steel or ceramic), so that the diaphragm and the media Pressure is proportional to the micro-displacement, so that the resistance of the sensor changes, the use of electronic circuits to detect this change, and convert a standard measurement signal corresponding to this pressure.
4, sapphire pressure sensor: the use of strain-resistance working principle, the use of silicon - sapphire as a semiconductor sensor, with unparalleled measurement characteristics. Therefore, silicon-sapphire semiconductor sensing devices are not sensitive to temperature changes, and have good operating characteristics even under high temperature conditions; sapphire has extremely strong radiation resistance characteristics; in addition, silicon-sapphire semiconductor sensing devices, no Pn drift.